| 摘要 |
The invention relates to an apparatus for deposition of polycrystalline silicon, comprising a reactor chamber with a reactor wall, at least 20 filament rods and gas inlet orifices for reaction gas in the reactor chamber, wherein each filament rod - except for the filament rods close to the reactor wall-has, at a distance of 150 to 450 mm, three further adjacent filament rods and one to three adjacent gas inlet orifices. The invention further relates to a process for depositing polycrystalline silicon on filament rods in such an apparatus, the gas inlet orifices are used to introduce a silicon--containing gas into the reactor chamber and the filament rods are heated to a temperature at which silicon is deposited thereon. |
