发明名称 |
LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING |
摘要 |
Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment. |
申请公布号 |
SG10201503883X(A) |
申请公布日期 |
2015.06.29 |
申请号 |
SGX10201503883 |
申请日期 |
2011.02.25 |
申请人 |
MICRON TECHNOLOGY, INC |
发明人 |
REN, ZAIYUAN;GEHRKE, THOMAS |
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