| 摘要 |
A semiconductor device and method for manufacturing same, the semiconductor device comprising: a first silicon layer (110; 210); a first dielectric layer (120; 220) located on the first silicon layer (110; 210), the first dielectric layer (120; 220) comprises windows (121; 221), and the lateral dimension at the bottom of the windows (121; 221) of the first dielectric layer (120; 220) is no more than 20 nm; a III-V group semiconductor layer (130; 230) located on the first dielectric layer (120; 220) and within the windows (121; 221) of the first dielectric layer (120; 220), and connected to the first silicon layer (110; 210) within the windows (121; 221) of the first dielectric layer (120; 220). Without line dislocation, the III-V group semiconductor material in the semiconductor device has higher performance. |
