| 发明名称 |
Methods for Forming Crystalline IGZO Through Power Supply Mode Optimization |
| 摘要 |
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is positioned relative to at least one target. The at least one target includes indium, gallium, zinc, or a combination thereof. A substantially constant voltage is provided across the substrate and the at least one target to cause a plasma species to impact the at least one target. The impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an IGZO layer above the substrate. |
| 申请公布号 |
US2015179444(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314139195 |
申请日期 |
2013.12.23 |
| 申请人 |
LG Display Co., Ltd. ;Intermolecular, Inc. |
发明人 |
Lee Sang;Chang Yoon-Kyung;Cho Seon-Mee;Kim Min-Cheol;Park Kwon-Sik;Shin Woosup |
| 分类号 |
H01L21/02;H01L29/786;H01L29/66 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
positioning a substrate relative to at least one target, the at least one target comprising indium, gallium, zinc, or a combination thereof; and providing a substantially constant voltage across the substrate and the at least one target to cause a plasma species to impact the at least one target, wherein the impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an indium-gallium-zinc oxide (IGZO) layer above the substrate. |
| 地址 |
Seoul KR |
