发明名称 METHOD AND APPARATUS FOR PATTERNING OF GRAPHENE OXIDE
摘要 <p>In accordance with an example embodiment of the present invention, a method is disclosed. The method comprises providing a substrate, depositing a graphene oxide (GO) film on the substrate, exposing at least one part of the GO film to photonic irradiation for reducing said at least one part of the GO film, thereby producing a pattern of at least one reduced GO (rGO) area in the GO film; and selectively depositing polar material onto the GO film according to said pattern of at least one rGO area.</p>
申请公布号 WO2015094005(A1) 申请公布日期 2015.06.25
申请号 WO2013RU01130 申请日期 2013.12.17
申请人 NOKIA TECHNOLOGIES OY;BESSONOV, ALEXANDER ALEXANDROVICH 发明人 BESSONOV, ALEXANDER ALEXANDROVICH;BORINI, STEFANO;WEI, DI;WHITE, RICHARD
分类号 H01L21/02;C01B31/04;H01L21/268;H01L21/67 主分类号 H01L21/02
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