发明名称 |
METHOD AND APPARATUS FOR PATTERNING OF GRAPHENE OXIDE |
摘要 |
<p>In accordance with an example embodiment of the present invention, a method is disclosed. The method comprises providing a substrate, depositing a graphene oxide (GO) film on the substrate, exposing at least one part of the GO film to photonic irradiation for reducing said at least one part of the GO film, thereby producing a pattern of at least one reduced GO (rGO) area in the GO film; and selectively depositing polar material onto the GO film according to said pattern of at least one rGO area.</p> |
申请公布号 |
WO2015094005(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2013RU01130 |
申请日期 |
2013.12.17 |
申请人 |
NOKIA TECHNOLOGIES OY;BESSONOV, ALEXANDER ALEXANDROVICH |
发明人 |
BESSONOV, ALEXANDER ALEXANDROVICH;BORINI, STEFANO;WEI, DI;WHITE, RICHARD |
分类号 |
H01L21/02;C01B31/04;H01L21/268;H01L21/67 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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