| 摘要 |
PROBLEM TO BE SOLVED: To reduce the influence of the characteristics of an end portion of a channel formation region of a semiconductor film on the characteristics of a transistor.SOLUTION: A stack in which a semiconductor film, a gate insulating film, and a first conductive film are sequentially stacked is formed on a substrate, and a plurality of stacks provided in an island shape are formed by selectively removing the stack. An insulating film is formed so as to cover the stacks provided in an island shape. A part of the insulating film is removed so that its height is substantially same as a surface of the first conductive film to expose the surface of the first conductive film. A second conductive film is formed on the first conductive film and a residual first insulating film. A resist is formed on the second conductive film, and then first conductive film and the second conductive film are selectively removed using the resist as a mask. |
