发明名称 |
Semiconductor devices including E-fuse arrays |
摘要 |
The semiconductor device includes a start signal generation circuit and a boot-up operation circuit. The start signal generation circuit detects a level of an external voltage signal to generate a pre-detection signal; executes a differential amplification operation of a voltage difference between the external voltage signal and a reference voltage signal to generate a first detection signal; detects a level of an internal voltage signal to generate a second detection signal, and generates a start signal in response to the first and second detection signals. The boot-up operation circuit executes a boot-up operation in response to the start signal. |
申请公布号 |
US9064588(B1) |
申请公布日期 |
2015.06.23 |
申请号 |
US201414174566 |
申请日期 |
2014.02.06 |
申请人 |
SK Hynix Inc. |
发明人 |
Kwon Ig Soo |
分类号 |
G11C5/14;G11C17/16;G11C7/06;G11C7/22 |
主分类号 |
G11C5/14 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A semiconductor device comprising:
a start signal generation circuit suitable for detecting a level of an external voltage signal to generate a pre-detection signal, executing a differential amplification operation of a voltage difference between the external voltage signal and a reference voltage signal to generate a first detection signal, detecting a level of an internal voltage signal to generate a second detection signal, and generating a start signal in response to the first and second detection signals; and a boot-up operation circuit suitable for executing a boot-up operation in response to the start signal, wherein the boot-up operation transmits control data internally generated to a first data latch unit and a second data latch unit. |
地址 |
Gyeonggi-do KR |