发明名称 PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of highly accurately controlling a process in the plasma processing apparatus which performs temporal modulation of plasma-generating high frequency power and high frequency bias power.SOLUTION: A plasma processing apparatus includes: a plasma processing chamber in which plasma processing is applied to a sample; a first high frequency power supply for supplying first high frequency power for generating plasma; a sample stand for placing a sample; a second high frequency power supply for supplying second high frequency power to the sample stand; and a pulse generation unit for transmitting a first pulse for performing temporal modulation of the first high frequency power to the first high frequency power supply and transmitting a second pulse for performing temporal modulation of the second high frequency power to the second high frequency power supply. The pulse generation unit includes a phase control waveform generation part for generating a phase modulating waveform for modulating a phase in an ON period of the second pulse to modulate the phase of the ON period of the second pulse by the phase modulating waveform.
申请公布号 JP2015115564(A) 申请公布日期 2015.06.22
申请号 JP20130258783 申请日期 2013.12.16
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 MORIMOTO MICHIKAZU;YASUI HISATERU;KANAZAWA SHUNSUKE;OGOSHI YASUO
分类号 H01L21/3065;H05H1/46 主分类号 H01L21/3065
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