发明名称 |
PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of highly accurately controlling a process in the plasma processing apparatus which performs temporal modulation of plasma-generating high frequency power and high frequency bias power.SOLUTION: A plasma processing apparatus includes: a plasma processing chamber in which plasma processing is applied to a sample; a first high frequency power supply for supplying first high frequency power for generating plasma; a sample stand for placing a sample; a second high frequency power supply for supplying second high frequency power to the sample stand; and a pulse generation unit for transmitting a first pulse for performing temporal modulation of the first high frequency power to the first high frequency power supply and transmitting a second pulse for performing temporal modulation of the second high frequency power to the second high frequency power supply. The pulse generation unit includes a phase control waveform generation part for generating a phase modulating waveform for modulating a phase in an ON period of the second pulse to modulate the phase of the ON period of the second pulse by the phase modulating waveform. |
申请公布号 |
JP2015115564(A) |
申请公布日期 |
2015.06.22 |
申请号 |
JP20130258783 |
申请日期 |
2013.12.16 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
MORIMOTO MICHIKAZU;YASUI HISATERU;KANAZAWA SHUNSUKE;OGOSHI YASUO |
分类号 |
H01L21/3065;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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