| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
The present invention provides a method for manufacturing a semiconductor structure, which is characterized in comprising following steps: providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; and forming an amorphous region outside the area for forming a channel region of the semiconductor structure in the monocrystalline silicon top layer. The method provided by the present invention can effectively improve reliability of a gate dielectric layer formed on the SOI substrate. |
| 申请公布号 |
US2015170915(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201214395444 |
申请日期 |
2012.09.21 |
| 申请人 |
Institute of Microelectronics, Chinese Academy of Sciences |
发明人 |
Bi Jinshun;Luo Jiajun;Han Zhengsheng |
| 分类号 |
H01L21/02;H01L21/84;H01L29/10;H01L21/033;H01L29/423;H01L29/06;H01L21/266;H01L21/265 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor structure comprises:
a) providing an SOI substrate for forming a semiconductor structure; the SOI substrate comprises a monocrystalline silicon top layer, a buried oxide layer and a support substrate; b) forming an amorphous region outside the area for forming a channel regions of a semiconductor structure in the monocrystalline silicon top layer. |
| 地址 |
Beijing CN |
