LIGHT EMITTING DEVICE HAVING TRANSPARENT ELECTRODE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE

摘要

Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a visible wavelength range and good ohmic contact characteristic with respect to a semiconductor layer and and a method of manufacturing the light emitting device. A transparent electrode of a light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material applied to the material, so that it is possible to obtain high transmittance with respect to light in a UV wavelength range.

主权项

1. A light emitting device comprising:
a substrate; a first semiconductor layer which is formed on the substrate; an activation layer which is formed on the first semiconductor layer to generate light; a second semiconductor layer which is formed on the activation layer; and an transparent electrode which is formed on the second semiconductor layer by using a transparent insulating material of which resistance state is changed from a high resistance state into a low resistance state according to an applied electric field.