| 摘要 |
According to one embodiment, a memory device includes a plurality of first interconnects extending in a first direction, and having divided portions formed respectively in the first interconnects at mutually-different positions in the first direction, a plurality of semiconductor members, each of the semiconductor members being disposed to extend over the first interconnects, a first insulating film disposed to cause each of the semiconductor members to be respectively connected to each of the first interconnects between portions of the first interconnects on two sides of the divided portions and to cause each of the semiconductor members to be insulated from other one of the first interconnects, a second insulating film provided on the semiconductor members, an electrode provided on the second insulating film, a memory cell member provided on the first interconnects, and a second interconnect provided on the memory cell member. |
