FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FORMING THE SAME

摘要

Various embodiments provide semiconductor devices and methods for forming the same. A first fin and a second fin are formed on a semiconductor substrate. A first dielectric layer is formed on the semiconductor substrate and has a top surface lower than a top surface of both of the first fin and the second fin. A gate structure is formed on the first dielectric layer and covering across a first portion of each of the first fin and the second fin. A second portion of the first fin on both sides of the gate structure is removed, forming a first recess. A first semiconductor layer is formed in the first recess. A second dielectric layer is formed on the first dielectric layer and the first semiconductor layer, and exposes a top surface of the second fin. A second semiconductor layer is formed on the exposed top surface of the second fin.

主权项

1. A method for forming a fin field effect transistor (FinFET), comprising:
providing a semiconductor substrate having an NMOS region and a PMOS region; forming a first fin on the PMOS region and a second fin on the NMOS region; forming a first dielectric layer on the semiconductor substrate, a top surface of the first dielectric layer being lower than a top surface of both of the first fin and the second fin; forming a gate structure on the first dielectric layer and covering across a first portion of each of the first fin and the second fin; removing a second portion of the first fin on both sides of the gate structure, to form a first recess on the PMOS region; forming a first semiconductor layer in the first recess; forming a second dielectric layer on the first dielectric layer, the second fin and the first semiconductor layer; removing a portion of the second dielectric layer to expose at least a top surface of the second fin; and forming a second semiconductor layer at least on the exposed top surface of the second fin.