发明名称 METHOD OF SYNTHESIZING A BI-DOMAIN STRUCTURE IN FERROELECTRIC SINGLE CRYSTAL WAFERS
摘要 <p>Invention relates to the information of bidomain structure in ferroelectric single crystals and can be used in nanotech and micromechanics for fabrication and operation of precise positioning devices, such as probe microscopes, tunable laser resonators, optics adjustment etc. The technical result achieved is the formation of bi-domain boundary, along with increased efficiency and stability of transforming electric signals to elastic deformations, raising sensitivity and precision due to the absence of mechanical hysteresis, creep and residual deformations in wide range of working temperatures with a high linearity of the voltage-to-mechanical deformation dependence.</p>
申请公布号 WO2015088371(A1) 申请公布日期 2015.06.18
申请号 WO2013RU01115 申请日期 2013.12.12
申请人 THE FEDERAL STATE AUTONOMOUS EDUCATIONAL INSTITUTION OF THE HIGHER PROFESSIONAL EDUCATION "NATIONALUNIVERSITY OF SCIENCE AND TECHNOLOGY "MISIS" 发明人 MALINKOVICH, MIKHAIL DAVYDOVICH;BYKOV, ALEXANDER SERGEEVICH;GRIGORYAN, SEDRAK GURGENOVICH;ZHUKOV, ROMAN NIKOLAEVICH;KISELEV, DMITRIY ALEKSANDROVICH;KUBASOV, ILYA VIKTOROVICH;PARKHOMENKO, YURIY NIKOLAEVICH
分类号 G02F1/00;C30B33/04 主分类号 G02F1/00
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