发明名称 BI-LAYER HARD MASK FOR ROBUST METALIZATION PROFILE
摘要 A robust metallization profile is formed by forming two or more layers of hard mask with different density. Multi-layer metal hard mask is helpful especially in small feature size process, for example, 50 nm and below. Lower layers have higher density. In such ways, enough process window is offered by lower layers and at the same time, a round hard mask profile is offered by upper layers.
申请公布号 KR20150067748(A) 申请公布日期 2015.06.18
申请号 KR20140177840 申请日期 2014.12.10
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 PAN SHING CHYANG;HSIEH CHING HUA;HSU HONG HUI
分类号 H01L21/033 主分类号 H01L21/033
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