| 摘要 |
Provided in the present invention are an interconnect structure for a semiconductor device, and a forming method thereof. Conductive lines having different width are formed. A wide conductive line is used in a place where an upper via is included, and a narrow conductive line is used in a place where an upper via is not included in a structure. An upper dielectric layer is formed, and via extended to the wide conductive line penetrating the upper dielectric layer is formed. An air gap can be formed adjacent to a selected conductive line, for example a narrow conductive line. |
