发明名称 |
Positive resist composition and method of pattern formation with the same |
摘要 |
A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid. |
申请公布号 |
US9057952(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201213345978 |
申请日期 |
2012.01.09 |
申请人 |
FUJIFILM Corporation |
发明人 |
Kanda Hiromi;Kanna Shinichi;Inabe Haruki |
分类号 |
G03F7/004;G03F7/039;G03F7/26;G03F7/20 |
主分类号 |
G03F7/004 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A positive resist composition comprising:
(A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid and which has no fluorine atom; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound having a molecular weight of 1,000 to 100,000 and containing (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution and (z) a group which decomposes by an action of an acid; and (F) a solvent, wherein the amount of the fluorine-containing compound (C) in the composition is 0.1-30% by mass, based on all solid components of the resist composition, and the total solids concentration in the positive resist composition is from 1.0 to 6.0% by mass. |
地址 |
Tokyo JP |