发明名称 Positive resist composition and method of pattern formation with the same
摘要 A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound containing at least one group selected from the groups (x) to (z); and (F) a solvent, and a method of pattern formation with the composition: (x) an alkali-soluble group; (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution; and (z) a group which decomposes by an action of an acid.
申请公布号 US9057952(B2) 申请公布日期 2015.06.16
申请号 US201213345978 申请日期 2012.01.09
申请人 FUJIFILM Corporation 发明人 Kanda Hiromi;Kanna Shinichi;Inabe Haruki
分类号 G03F7/004;G03F7/039;G03F7/26;G03F7/20 主分类号 G03F7/004
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A positive resist composition comprising: (A) a resin which comes to have an enhanced solubility in an alkaline developing solution by an action of an acid and which has no fluorine atom; (B) a compound which generates an acid upon irradiation with actinic rays or a radiation; (C) a fluorine-containing compound having a molecular weight of 1,000 to 100,000 and containing (y) a group which decomposes by an action of an alkaline developing solution to enhance a solubility in an alkaline developing solution and (z) a group which decomposes by an action of an acid; and (F) a solvent, wherein the amount of the fluorine-containing compound (C) in the composition is 0.1-30% by mass, based on all solid components of the resist composition, and the total solids concentration in the positive resist composition is from 1.0 to 6.0% by mass.
地址 Tokyo JP