Solar cell element and method for manufacturing same

摘要

A solar cell element having a transparent substrate body, a NaxAg1-x, layer, a ZnO layer, a transparent conductive layer, and a photoelectric conversion layer including an n-type semiconductor layer and a p-type semiconductor layer. The transparent substrate body, the NaxAg1-x layer, the ZnO layer, the transparent conductive layer, and the photoelectric conversion layer are stacked in this order, x represents a value of not less than 0.001 and not more than 0.02, the NaxAg1-x layer has a thickness of 2-15.2 nanometers, and the ZnO layer has an arithmetical mean roughness of not less than 20-750 nanometers. The ZnO layer is composed of a plurality of ZnO columnar crystal grain, each ZnO columnar crystal grain has a longitudinal direction along a normal line direction of the transparent substrate body, and each ZnO columnar crystal grain has a R2/R1 ratio of 1.1-1.6.

主权项

1. A method for generating an electric power using a solar cell element, the method comprising steps of:
(a) preparing a solar cell element comprising: a transparent substrate body; a NaxAg1-x layer; a ZnO layer; a transparent conductive layer; a photoelectric conversion layer including an n-type semiconductor layer and a p-type semiconductor layer; an n-side electrode; and a p-side electrode; wherein the transparent substrate body, the NaxAg1-x layer 22, the ZnO layer, the transparent conductive layer, and the photoelectric conversion layer are stacked in this order; the n-side electrode is electrically connected to the n-type semiconductor layer; the p-side electrode is electrically connected to the p-type semiconductor layer; x represents a value of not less than 0.001 and not more than 0.02; the NaxAg1-x layer has a thickness of not less than 2 nanometers and not more than 15.2 nanometers; the ZnO layer has an arithmetic mean roughness of not less than 20 nanometers and not more than 750 nanometers; the ZnO layer is composed of a plurality of ZnO columnar crystal grains grown on the surface of the NaxAg1-x layer; each ZnO columnar crystal grain has a longitudinal direction along a line normal to the transparent substrate body; each ZnO columnar crystal grain has a width which increases from the NaxAg1-x layer toward the transparent conductive layer; the width of each ZnO columnar crystal grain is perpendicular to the longitudinal direction; and each ZnO columnar crystal grain has a R2/R1 ratio of not less than 1.1 and not more than 1.6; where R1 represents a width of a first end of the ZnO columnar crystal grain, the first end being in contact with the surface of the NaxAg1-x layer; and R2 represents a width of a second end of the ZnO columnar crystal grain, wherein the second end is opposite to the first end; and (b) irradiating the photoelectric conversion layer with light through the transparent substrate body, the NaxAg1-x layer, the ZnO layer, and the transparent conductive layer, so as to generate electric power between the n-side electrode and the p-side electrode.