METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME
摘要
<p>A method for processing a substrate according to the present invention comprises the steps of: generating first plasma from first reaction gas; generating second plasma from second reaction gas; and separately supplying the first plasma and the second plasma to a substrate. Therefore, the substrate is processed using two or more kinds of plasma generated under different process conditions optimized for allowing each of two or more remote plasma sources to process a substrate, thereby having a desired shape.</p>
申请公布号
KR20150065025(A)
申请公布日期
2015.06.12
申请号
KR20130150053
申请日期
2013.12.04
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
SAM HYUNG SAM KIM;KIM, GON JUN;VOLYNETS VLADIMIR;PARK, YONG KYUN;SONG, IN CHEOL;LEE, SANG HEON;JEON, SANG JEAN