发明名称 METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME
摘要 <p>A method for processing a substrate according to the present invention comprises the steps of: generating first plasma from first reaction gas; generating second plasma from second reaction gas; and separately supplying the first plasma and the second plasma to a substrate. Therefore, the substrate is processed using two or more kinds of plasma generated under different process conditions optimized for allowing each of two or more remote plasma sources to process a substrate, thereby having a desired shape.</p>
申请公布号 KR20150065025(A) 申请公布日期 2015.06.12
申请号 KR20130150053 申请日期 2013.12.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SAM HYUNG SAM KIM;KIM, GON JUN;VOLYNETS VLADIMIR;PARK, YONG KYUN;SONG, IN CHEOL;LEE, SANG HEON;JEON, SANG JEAN
分类号 H01L21/3065 主分类号 H01L21/3065
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