| 发明名称 |
HALF-BRIDGE CIRCUIT WITH A LOW-SIDE TRANSISTOR AND A LEVEL SHIFTER TRANSISTOR INTEGRATED IN A COMMON SEMICONDUCTOR BODY |
| 摘要 |
A half-bridge circuit includes a low-side transistor and a high-side transistor each having a load path and a control terminal. The half-bridge circuit further includes a high-side drive circuit having a level shifter with a level shifter transistor. The low-side transistor and the level shifter transistor are integrated in a common semiconductor body. |
| 申请公布号 |
US2015162324(A1) |
申请公布日期 |
2015.06.11 |
| 申请号 |
US201514606374 |
申请日期 |
2015.01.27 |
| 申请人 |
Infineon Technologies Austria AG |
发明人 |
Mauder Anton;Hirler Franz;Weyers Joachim;Wahl Uwe |
| 分类号 |
H01L27/06;H01L29/78;H01L27/088 |
主分类号 |
H01L27/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A half-bridge circuit, comprising:
a low-side transistor and a high-side transistor each comprising a load path and a control terminal; a high-side drive circuit comprising a level shifter with a level shifter transistor; and wherein the low-side transistor and the level shifter transistor are integrated in a common semiconductor body. |
| 地址 |
Villach AT |
