| 摘要 |
Disclosed are a semiconductor device and a manufacturing method thereof. The disclosed semiconductor device comprises a semiconductor substrate including a two-dimensional electronic gas layer as a half bridged field effect transistor formed in a monolithic chip shape; and a drain electrode, a first gate electrode, an output electrode, a second gate electrode and a source electrode formed on the semiconductor substrate. The disclosed method for manufacturing a semiconductor device uses a method for monolithic formation of a stacked structure including a half bridge function on one substrate upon a semiconductor process. |
