METHOD FOR GROWING COMPOUND SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor layer subjected to lattice matching at a high throughput while checking the lattice matching during the growth of a compound semiconductor.SOLUTION: When a ternary or quaternary compound semiconductor (mixed crystal semiconductor) grows on a semiconductor substrate or pseudo substrate, an amount of warpage of a substrate warped per unit time is estimated by grasping a lattice constant, a thermal expansion coefficient and a growth rate and a curvature of the substrate during the growth is measured in situ on the other hand. By determining whether or not these two amounts of the warpage match with each other, a material composition of a growth layer is decided to grow a semiconductor that is lattice matched.