| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a dielectric device, in which good etching selectivity for a mask can be obtained while securing an etching rate. <P>SOLUTION: In a method for manufacturing a dielectric device, an etching gas containing at least one type of a chlorine-based gas and a fluorocarbon-based gas is used as an etching gas. By subjecting an electrode layer 4 to dry etching using plasma of this etching gas, a metal layer 4a and a conductive oxide layer 4b constituting the electrode layer 4 are sequentially etched. The use of this type of etching gas allows good etching selectivity for a resist mask to be obtained while securing an etching rate of the electrode layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
