| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high frequency switch circuit that keeps a gate-body voltage within the withstanding voltage of a MOSFET with high reliability. <P>SOLUTION: In the high frequency switch circuit having the MOSFET and a control circuit capable of controlling gate and body potentials of the MOSFET, the control circuit includes a timing control circuit, and the timing control circuit can change the gate potential of the MOSFET before changing the body potential when a high frequency signal path is switched from a connected state to a disconnected state, and can change the body potential of the MOSFET before changing the gate potential when the disconnected state is changed to the connected state. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
