发明名称 |
A HARDMASK PROCESS FOR FORMING A REVERSE TONE IMAGE USING POLYSILAZANE |
摘要 |
<p>The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.</p> |
申请公布号 |
EP2396703(B1) |
申请公布日期 |
2015.06.10 |
申请号 |
EP20090785860 |
申请日期 |
2009.03.30 |
申请人 |
MERCK PATENT GMBH |
发明人 |
ABDALLAH, DAVID, J.;DAMMEL, RALPH, R.;TAKANO, YUSUKE;LI, JIN;KUROSAWA, KAZUNORI |
分类号 |
G03F7/40;H01L21/027;H01L21/033;H01L21/3213 |
主分类号 |
G03F7/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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