Semiconductor device

摘要

A semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type on the first semiconductor region, a third semiconductor region of the first conductivity type on the second semiconductor region, a control electrode disposed within and insulated from the first, second, and third semiconductor regions, a first electrode electrically connected with the second and third semiconductor regions, a second electrode, and a fourth semiconductor region of the second conductivity type between the second electrode and the first semiconductor region. The fourth semiconductor region includes a first portion having a first dopant concentration and a second portion having a second dopant concentration higher than the first dopant concentration, and a contact area of the first portion with the second electrode is larger than a contact area of the second area with the second electrode.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type on the first semiconductor region; a third semiconductor region of the first conductivity type on the second semiconductor region; a control electrode disposed within the first and second semiconductor regions; an insulating film between the control electrode and the first and second semiconductor regions; a first electrode electrically connected with the second semiconductor region and the third semiconductor region; a second electrode; and a fourth semiconductor region of the second conductivity type between the second electrode and the first semiconductor region and electrically connected with the second electrode, the fourth semiconductor region including a first portion having a first dopant concentration and a second portion having a second dopant concentration higher than the first dopant concentration, wherein an area of contact of the first portion with the second electrode is larger than an area of contact of the second area with the second electrode.