发明名称 Image pickup apparatus
摘要 There is provided an image pickup apparatus including a pixel including a photoelectric conversion element and an amplification element for amplifying and outputting a signal generated at the photoelectric conversion element, a load transistor for controlling an electric current flowing at the amplification element, and a potential control element for suppressing potential fluctuation in a first main electrode region of the load transistor which is an output side of the amplification element.
申请公布号 US9055211(B2) 申请公布日期 2015.06.09
申请号 US201314016344 申请日期 2013.09.03
申请人 Canon Kabushiki Kaisha 发明人 Sakurai Katsuhito;Koizumi Toru;Hiyama Hiroki
分类号 H04N5/378;H04N5/232;H04N5/361;H04N5/365;H04N5/374;H04N5/3745 主分类号 H04N5/378
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. An image pickup apparatus comprising: a plurality of signal lines, to each of which a signal is outputted from one of a plurality of pixels, wherein each pixel includes a photoelectric conversion element and an amplification element arranged to amplify a signal generated at said photoelectric conversion element; a plurality of load transistors, each provided correspondingly to one of the plurality of signal lines, to supply a bias current to the amplification element; a plurality of control transistors; and a common line arranged in common to all the load transistors, wherein said plurality of load transistors have respective first electrodes connected to said common line and respective second electrodes arranged at a side of said plurality of signal lines, and the common line has impedance from the respective first electrodes to an absolute ground, and wherein said plurality of control transistors are electrically connected in parallel between said second electrodes of the plurality of load transistors and the plurality of signal lines, and control electrodes of said plurality of control transistors are adapted to be applied with a common constant first voltage by a drive circuit to determine voltages of the second electrodes of said plurality of load transistors.
地址 Tokyo JP