发明名称 Configurable bevel etcher
摘要 A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
申请公布号 US9053925(B2) 申请公布日期 2015.06.09
申请号 US201113081264 申请日期 2011.04.06
申请人 Lam Research Corporation 发明人 Bailey, III Andrew D.;Schoepp Alan M.;Sexton Gregory;Kim Yunsang;Kennedy William S.
分类号 H01L21/00;H01L21/02;H01J37/32;H01L21/67 主分类号 H01L21/00
代理机构 Buchanan Ingersoll & Rooney PC 代理人 Buchanan Ingersoll & Rooney PC
主权项 1. A bevel etcher wherein a bevel edge of a semiconductor substrate is subjected to plasma cleaning, comprising: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring supported on the top portion of the lower support, the lower PEZ ring having an upper surface, a step on a lower inner edge which mates with an outer edge of the lower support, and a step on an upper outer edge which is configured to underlie the semiconductor substrate; an upper dielectric component disposed above the lower support and having a cylindrical bottom portion opposing the top portion of the lower support; an upper PEZ ring surrounding the bottom portion of the dielectric component and opposing the lower PEZ ring, an annular space between the lower and upper PEZ rings limiting the extent of the bevel edge to be cleaned by the plasma; at least one radio frequency (RF) power source adapted to energize process gas into the plasma during a cleaning operation; wherein the lower and upper PEZ rings are adapted to respectively shield the lower support and the upper dielectric component from the plasma during the cleaning operation.
地址 Fremont CA US