SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

摘要

A film is formed on a surface of a lamp, because a raw material gas is flowed into a release surface of a wafer by dislocation of a substrate, when pressure in a chamber is rapidly changed during ALD film formation with a timing of flowing the raw material gas. Provided is a substrate processing apparatus which comprises a substrate process chamber processing a substrate; a gas supply part alternately supplying multiple process gases to the substrate process chamber, when processing the substrate; a substrate protection part including a protection tool protecting a part of a release surface of the substrate, and a support pat supporting the protection tool; a heating part heating the substrate from the release surface; a stand by chamber where the substrate protection part stands by; and a control part controlling the gas supply part and/or the gas exhaust part for pressure of the substrate process chamber to be higher than pressure of the stand by chamber.