| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of further reducing β variation of a bipolar transistor, and to provide a method of manufacturing the same. ! SOLUTION: Provided is a semiconductor device comprising a bipolar transistor using a polysilicon film as an emitter electrode. The bipolar transistor 100 comprises: a collector region 10 formed on an Si substrate 1; a base layer 30 formed on the collector region 10; an emitter region 39 formed at an upper portion away from the collector region 10, of the base layer 30; and an insulating film 40 formed on the base layer 30, and covering a junction part between the base layer 30 and the emitter region 39. The insulating film 40 at least includes a silicon thermal oxide film 41 formed on the base layer 30. ! COPYRIGHT: (C)2015,JPO&INPIT |
