SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a 3D semiconductor memory device and a manufacturing method thereof. Provided is the method for manufacturing the 3D semiconductor memory device which includes the steps of: forming a thin film structure by alternately and repetitively stacking insulation layers and sacrificial layers on a substrate; forming a channel structure which is connected to the substrate through the thin film structure; forming a trench passing through the thin film structure to be separated from the channel structure, wherein, the trench includes a recess region extended to the lower side of the trench; forming a semiconductor pattern which fills the recess region by performing a selective epitaxial growth process; and replacing the sacrificial layers exposed on the trench with gate patterns.