NANOTUBE SEMICONDUCTOR DEVICES

摘要

Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a semiconductor layer on a semiconductor substrate of opposite conductivity type and having trenches formed therein where the trenches extend from the top surface to the bottom surface of the semiconductor layer. The semiconductor device includes a first epitaxial layer formed on sidewalls of the trenches where the first epitaxial layer is substantially charge balanced with adjacent semiconductor regions. In another embodiment, a semiconductor device is formed in a first semiconductor layer having trenches and mesas formed thereon where the trenches extend from the top surface to the bottom surface of the first semiconductor layer. The semiconductor device includes semiconductor regions formed on the bottom surface of the mesas of the first semiconductor layer.

主权项

1. (canceled)