| 摘要 |
<p>Provided are, in an apparatus for heating microwave, a matching method and a method for heating microwave capable of suppressing a reflected wave and heating a substrate in high efficiency of the microwave. The method for heating microwave includes: a step (S1) for adjusting a wafer (W) to a first height position; a step (S2) for matching impedances between a magnetron (31) and a treatment container (2) when the wafer (W) is maintained at a first height position; a step (S3) for determining a second height position based on the temperature of the wafer (W); a step (S4) for performing matching of impedance again when the wafer (W) is maintained at the second height position; a step (S5) for performing a heating process by radiating the wafer (W) maintained at the second height position with microwave introduced into the treatment container (2) by the microwave introducing device (3).</p> |
