| 摘要 |
<p>According to an embodiment of the present invention, an ingot growing apparatus comprises a chamber for growing ingots; a crucible for accommodating silicon melt to grow the ingots; a heater part for heating the crucible; an insulating material which is disposed between an inner wall of the chamber and the crucible; and an exhaust means which is installed on a lower side of the chamber, and has a discharge path of gas introduced when growing the ingots. The exhaust means comprises an exhaust path through which gas to be discharged moves; an exhaust port insulating material provided in the exhaust path; and a ventilation fan which is installed in the exhaust port insulating material. According to an embodiment of the present invention, deposition occurring as gas is reacted with the inner wall of the exhaust port insulating material can be reduced when the gas used in the chamber is discharged by the structure of the ventilation fan and gas injection parts, and change in pressure inside the chamber can be reduced when growing ingots.</p> |
