发明名称 Inductor structure with magnetic material
摘要 Embodiments of mechanisms of forming an inductor structure are provided. The inductor structure includes a substrate and a first dielectric layer formed over the substrate. The inductor structure includes a first metal layer formed in the first dielectric layer and a second dielectric layer over the first metal layer. The inductor structure further includes a magnetic layer formed over the first dielectric layer, and the magnetic layer has a top surface, a bottom surface and sidewall surfaces between the top surface and the bottom surface, and the sidewall surfaces have at least two intersection points.
申请公布号 US9048128(B2) 申请公布日期 2015.06.02
申请号 US201314044979 申请日期 2013.10.03
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD 发明人 Tseng Yuan-Tai;Liu Ming-Chyi;Chou Chung-Yen;Tsai Chia-Shiung
分类号 H01L29/00;H01L49/02 主分类号 H01L29/00
代理机构 McClure, Qualey & Rodack, LLP 代理人 McClure, Qualey & Rodack, LLP
主权项 1. An inductor structure, comprising: a substrate; a first dielectric layer formed over the substrate; a first metal layer formed in the first dielectric layer; a second dielectric layer over the first metal layer; a magnetic layer formed over the first dielectric layer, wherein the magnetic layer has a top surface, a bottom surface and sidewall surfaces between the top surface and the bottom surface, and the sidewall surfaces have at least two intersection points, and wherein the sidewall surfaces comprise a first pair of sidewall surfaces adjoin the bottom surface and a second pair of sidewall surfaces adjoin the first pair of sidewall surfaces, wherein the first pair of sidewall surfaces are vertical to the bottom surface of the magnetic layer; and the second pair of sidewall surfaces taper gradually toward the top surface of the magnetic layer.
地址 Hsin-Chu TW