Nonvolatile memory devices and methods forming the same

摘要

Provided are nonvolatile memory devices and methods of forming the same. The nonvolatile memory device includes a plurality of word lines, a ground select line, string select line, and a dummy word line. Each of distances between the dummy word line and the ground select line and between the dummy word line and the word line is greater than a distance between a pair of the word lines adjacent to each other.

主权项

1. A nonvolatile memory device comprising:
a substrate; a group of first word lines on the substrate; a ground select line on the substrate; and a first dummy word line on the substrate, the first dummy word line being interposed between the group of first word lines and the ground select line, wherein a first distance between the ground select line and the first dummy word line is greater than a second distance between the first dummy word line and a nearest one of the group of first word lines to the first dummy word line, wherein the second distance is greater than a third distance between adjacent first word lines.