Single-Band and Dual-Band Infrared Detectors

摘要

Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

主权项

1. A bias-switchable dual-band infrared detector comprising:
first and second contact structures; a first unipolar electron barrier layer adjacent to said first contact layer, and a second unipolar electron barrier layer adjacent said second contact layer; a first absorber layer adjacent to said first unipolar electron barrier layer, and a second absorber layer adjacent to said second unipolar electron barrier layer; a unipolar hole barrier layer disposed between said first and second absorber layers; and wherein the hole unipolar barrier is configured to block the flow of minority carriers between the first and second absorber layers.