SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A method of fabricating a three-dimensional (3D) semiconductor memory device is provided. Sacrificial layers and insulating layers are alternately and repeatedly stacked on a top surface of a substrate to form a thin layer structure. A channel structure penetrating the thin layer structure is formed to be in contact with the substrate. A trench penetrating the thin layer structure is formed. The sacrificial layers, the insulating layers and the substrate are exposed in the trench. A recess region formed in the substrate exposed by the trench. A semiconductor pattern filling is formed the recess region. The sacrificial layers exposed by the trench are replaced with gate patterns.

主权项

1. A method of fabricating a three-dimensional (3D) semiconductor memory device, the method comprising:
alternately and repeatedly stacking sacrificial layers and insulating layers on a top surface of a substrate to form a thin layer structure; forming a channel structure penetrating the thin layer structure to be in contact with the substrate; forming a trench penetrating the thin layer structure, wherein the sacrificial layers, the insulating layers and the substrate are exposed in the trench; forming a recess region in the substrate exposed by the trench; forming a semiconductor pattern filling the recess region; and replacing the sacrificial layers exposed by the trench with gate patterns.