SILICON CARBIDE INGOT AND PRODUCTION METHOD OF SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide ingot capable of suppressing warpage of a substrate when being cut by using a wire saw by a fixed abrasive-grain system, and to provide a production method of a silicon carbide substrate executed by using the silicon carbide ingot.SOLUTION: A silicon carbide ingot 1 has an end face 1a and an end face 1b which is an end face on the opposite side to the end face 1a. In the silicon carbide ingot 1, the gradient of a nitrogen concentration in a growth direction which is a facing direction of the end face 1a and the end face 1b is 1×10cmor more and 1×10cmor less.