| 摘要 |
PROBLEM TO BE SOLVED: To suppress variation in voltage drop caused by wiring resistance and its associated ununiformity in current applied to power semiconductor elements when the power semiconductor elements are driven in parallel, thereby improving reliability of a semiconductor device.SOLUTION: A semiconductor device comprises: a positive-electrode-side substrate 4 connected with a positive-electrode-side external connection terminal 1; a plurality of positive-electrode-side element mounting substrates 8a-8c respectively connected with the positive-electrode-side substrate 4 by a main wiring line 13a; a plurality of positive-electrode-side MOSFETs 7a-7c, each being disposed on each of the plurality of positive-electrode-side element mounting substrates 8a-8c; an output-side substrate 5 connected with one surface of each of the positive-electrode-side MOSFETs 7a-7c by a main wiring line 13b; and an output-side external connection terminal 2 connected with the output-side substrate 5. In the main wiring line 13a, the farther a portion thereof from the positive-electrode-side external connection terminal 1 is, the lower electric resistance is; and in the main wiring line 13b, the farther a portion thereof from the output-side external connection terminal 2 is, the lower electric resistance is. |
