| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can suppress occurrence of slip defect on semiconductor wafers even when using a high-temperature heat treatment board used by horizontally holding a large number of semiconductor wafers. <P>SOLUTION: A plurality of integrally solid fixed high heat-resistance support pillars 1 respectively include support grooves 2 formed at predetermined intervals. A high-temperature heat treatment board 10 includes a mutual array horizontally holding a plurality of semiconductor wafers 3a and 3b at the predetermined intervals in a state that the plurality of high heat-resistance support pillars 1 are disposed upright. A method of manufacturing a semiconductor device with the support grooves 2 includes a high-temperature heat treatment step of placing wafers into a high-temperature furnace using the high-temperature heat treatment board 10. That is, at least one dummy wafer 3b (1) is disposed immediately above and immediately below a plurality of semiconductor wafer group regions 6 and 7 held by the board 10, and a plurality of dummy wafers 3b are disposed at an extended part by placing a space of at least one wafer immediately above and immediately below the dummy wafer 3b (1). <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
