发明名称 |
Vähennetyllä radiotaajuushäviöllä varustettu korkearesistiivinen piisubstraatti radiotaajuiselle integroidulle passiivilaitteelle |
摘要 |
The application relates to a high-resistivity silicon substrate (100) with a reduced radio frequency loss for a radio frequency integrated passive device. The substrate comprising a bulk zone (110) comprising high-resistivity bulk silicon and a preserved sub-surface lattice damage zone (120b) comprising fractured silicon above the bulk zone. The lattice damage zone is processed into the substrate and the preserved lattice damage zone is configured to achieve the RF loss reduction of the substrate by suppressing a parasitic surface conduction. |
申请公布号 |
FI20136180(A) |
申请公布日期 |
2015.05.27 |
申请号 |
FI20130006180 |
申请日期 |
2013.11.26 |
申请人 |
OKMETIC OYJ |
发明人 |
HAAPALINNA, ATTE |
分类号 |
H01L23/552;G06K19/077;H01Q1/22 |
主分类号 |
H01L23/552 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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