Low temperature silicon carbide deposition process

摘要

Methods for formation of silicon carbide on substrate are provided. Atomic layer deposition methods of forming silicon carbide are described in which a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0, and X=F, Cl, Br, I; and a second reactant gas of the formula MR3-bYb, wherein R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3 are sequentially deposited on a substrate and then exposed to a plasma. The process can be repeated multiple times to deposit a plurality of silicon carbide layers.

主权项

1. A method for forming a silicon carbide material on a substrate surface comprising:
exposing a substrate sequentially to a first reactant gas of the formula SinHaXb wherein n=1-5, a+b=2n+2, a>0 and X=F, Cl, Br, I; and second reactant gas of the formula MR3-bYb, wherein M is an element selected from Group III or Group IIIb of the period table, R is a hydrocarbon containing substituent, Y is a halide, hydride or other ligand and b=1-3, to form a silicon carbide layer containing excess hydrogen on the substrate during an atomic layer deposition process; exposing the substrate having the silicon carbide layer to a treatment process to remove at least some of the excess hydrogen; and repeating sequentially the atomic layer deposition process and the treatment process.