Nonvolatile semiconductor memory device

摘要

According to one embodiment, a device includes a fin type active area on a semiconductor substrate, the active area having an upper surface with a taper shape, having a width in a first direction, and extending in a second direction intersect with the first direction, a first insulating layer on the active area, a charge storage layer on the first insulating layer, the charge storage layer having an upper surface with a taper shape, a second insulating layer covering the upper surface of the charge storage layer, and a control gate electrode on the second insulating layer, the control gate electrode extending in the first direction.

主权项

1. A nonvolatile semiconductor memory device comprising:
a semiconductor substrate; an active area on the semiconductor substrate, the active area having an upper surface with a first taper shape, having a width in a first direction, and extending in a second direction which intersects with the first direction; a first insulating layer on the upper surface of the active area; a charge storage layer on the first insulating layer, the charge storage layer having an upper surface with a second taper shape; a second insulating layer covering the upper surface of the charge storage layer, the second insulating layer having an upper surface with a third taper shape and an lower surface with a fourth taper shape downward bulged, the third taper shape and the fourth taper shape meeting at side boundaries, the side boundaries being located farthest from a center of the active area in the first direction; and a control gate electrode on the upper surface of the second insulating layer, the control gate electrode extending in the first direction.