| 发明名称 | Sputtering target | ||
| 摘要 | A sputtering target including a sintered body including In, Ga and Mg, the sintered body including one or more compounds selected from a compound represented by In2O3, a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, andhaving an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less. | ||
| 申请公布号 | US9039944(B2) | 申请公布日期 | 2015.05.26 |
| 申请号 | US201214130857 | 申请日期 | 2012.06.28 |
| 申请人 | IDEMITSU KOSAN CO., LTD. | 发明人 | Ebata Kazuaki;Tomai Shigekazu;Terai Kota;Matsuzaki Shigeo;Yano Koki |
| 分类号 | H01L21/283;H01L29/788;C23C14/08;C23C14/34;H01L21/02;C01G15/00;H01B1/08;H01L29/786;C04B35/01;C04B35/626;H01L27/12 | 主分类号 | H01L21/283 |
| 代理机构 | Foley & Lardner LLP | 代理人 | Foley & Lardner LLP |
| 主权项 | 1. A sputtering target comprising a sintered body comprising In, Ga and Mg, the sintered body comprising a compound redresented by In2O3, the sintered body comprising one or more compounds selected from a compound represented by In(GaMg)O4, a compound represented by Ga2MgO4 and a compound represented by In2MgO4, and having an atomic ratio In/(In+Ga+Mg) of 0.5 or more and 0.9999 or less and an atomic ratio (Ga+Mg)/(In+Ga+Mg) of 0.0001 or more and 0.5 or less. | ||
| 地址 | Tokyo JP | ||