发明名称 Freestanding films with electric field-enhanced piezoelectric coefficients
摘要 A method to produce low-temperature sinterable powders which are then subsequently used to fabricate freestanding piezoelectric films with very large electric-field-enhanced piezoelectric response is provided. The −d31 coefficient for PMN-PT layers can be as high as 2000 pm/V, larger than that of commercial single crystalline PMN-PT bulk materials, at 10 kV/cm (or 20 V over the 20-micron film thickness). In contrast to single crystals, the polycrystalline freestanding films are easy to fabricate and can be made into any size. The films are also easily miniaturized. The method can be applied to nearly any piezoelectric material.
申请公布号 US9039921(B2) 申请公布日期 2015.05.26
申请号 US201012784173 申请日期 2010.05.20
申请人 Drexel University 发明人 Shih Wei-Heng;Luo Hongyu;Martorano Christian;Shih Wan Y.
分类号 C04B35/495;H01L41/18;H01L41/187;C04B35/00;C04B35/499;C04B35/626;C04B35/628;C04B35/634;H01L41/43 主分类号 C04B35/495
代理机构 Mendelsohn, Drucker & Dunleavy, P.C. 代理人 Mendelsohn, Drucker & Dunleavy, P.C.
主权项 1. A polycrystalline ceramic freestanding film having −d31 of from 1500 pm/V to 2000 pm/V at either 9 or 10 kV/cm, wherein the film has a thickness of a few grains up to 50 μm and said polycrystalline ceramic is either PMN-PT or PZN-PT.
地址 Philadelphia PA US