发明名称 Method for detaching a semiconductor chip from a foil
摘要 A method for detaching a semiconductor chip from a foil uses a die ejector comprising plates having a straight supporting edge and an L-shaped supporting edge comprises: lifting of the plates to a height H1 above the surface of a cover plate;lowering of a first pair of plates with L-shaped supporting edge;optionally, lowering of a second pair of plates with L-shaped supporting edge;lifting of the plates that have not yet been lowered to a height H2>H1;staggered lowering of plates that have not yet been lowered, with at least one or several plates not being lowered;optionally, lowering of the plates that have not yet been lowered to a height H3<H2;lowering of the plates until all plates are lowered, andmoving away of the chip gripper,wherein the chip gripper touches the semiconductor chip before lowering the last three plates.
申请公布号 US9039867(B2) 申请公布日期 2015.05.26
申请号 US201313839586 申请日期 2013.03.15
申请人 Besi Switzerland AG 发明人 Barmettler Ernst;Hurschler Fabian;Pulis Brian
分类号 B32B38/10;H01L21/67;H01L21/677;H01L21/02;H01L21/00 主分类号 B32B38/10
代理机构 Nixon Peabody LLP 代理人 Nixon Peabody LLP
主权项 1. A method for detaching a semiconductor chip from a foil by means of a chip gripper and a die ejector, wherein the die ejector comprises a first plurality plates having a straight supporting edge and a second plurality of plates having an L-shaped supporting edge, a first set of two of the second plurality of plates are arranged to form a first pair of outermost plates, the first plurality of plates and the second plurality of plates protruding into a central hole of a cover plate, and wherein the supporting edges of the first plurality of plates and the second plurality of plates in an initial position form a supporting plane on which the foil rests, the method comprising the following steps: A) lifting all of the first plurality of plates and the second plurality of plates, so that the supporting edges of the first plurality of plates and the second plurality of plates assume a height H1 above a surface of the cover plate; B) lowering the first pair of outermost plates leaving a first group of plates raised; C) lifting the first group of plates, so that the supporting edges of the first group of plates assume a height H2>H1 above the surface of the cover plate; D) lowering some but not all of the first group of plates in a predetermined sequence leaving a last group of at least three plates from the first group of plates; E) positioning the chip gripper above the semiconductor chip; F) lowering the chip gripper into contact with the semiconductor chip before the lowering of the last group of at least three plates; and G) lowering the last group of at least three plates until all of the last group of at least three plates are lowered, wherein steps A to D are executed in the order listed above and before steps F and G.
地址 Cham CH