发明名称 Three-dimensional image sensor and mobile device including same
摘要 A 3D image sensor includes a depth pixel that includes; a photo detector generating photo-charge, first and second floating diffusion regions, a first transfer transistor transferring photo-charge to the first floating diffusion region during a first transfer period in response to a first transfer gate signal, a second transfer transistor transferring photo-charge to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, and an overflow transistor that discharges surplus photo-charge in response to a drive gate signal. Control logic unit controlling operation of the depth pixel includes a first logic element providing the first transfer gate signal, a second logic element providing the second transfer gate signal, and another logic element providing the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period.
申请公布号 US9041916(B2) 申请公布日期 2015.05.26
申请号 US201213615860 申请日期 2012.09.14
申请人 Samsung Electronics Co., Ltd. 发明人 Oh Min Seok;Kong Hae Kyung;Kim Tae Chan;Ahn Jung Chak;Lim Moo Sup
分类号 H04N13/02;H01L27/146;H04N5/3745;G01S7/486 主分类号 H04N13/02
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A three-dimensional (3D) image sensor comprising: a pixel array comprising a plurality of depth pixels, wherein each depth pixel in the plurality of depth pixels comprises: a photo detector configured to generate photo-charge,first and second floating diffusion regions,a first transfer transistor configured to transfer photo-charge from the photo detector to the first floating diffusion region during a first transfer period in response to a first transfer gate signal,a second transfer transistor configured to transfer photo-charge from the photo detector to the second floating diffusion region during a second transfer period in response to a second transfer gate signal, andan overflow transistor that controls discharge of surplus photo-charge generated by the photo detector in response to a drive gate signal; and a control logic unit that controls operation of each depth pixel and comprises: a first logic element that provides the first transfer gate signal,a second logic element that provides the second transfer gate signal, andanother logic element that provides the drive gate signal to the overflow transistor when the first transfer period overlaps, at least in part, the second transfer period.
地址 Suwon-si, Gyeonggi-do KR