| 发明名称 |
MEMORY CIRCUIT AND METHOD OF OPERATING THE MEMORY CIRCUIT |
| 摘要 |
A memory circuit includes a memory cell, a data line configured to be coupled with the memory cell, a node, a precharge circuit, a first transistor of a first type, and a second transistor of the first type. The precharge circuit is configured to charge the node toward a predetermined voltage level. The first transistor of the first type has a drain coupled with the node and a source coupled with the data line, and the first transistor has a first threshold voltage. The second transistor of the first type has a drain coupled with the node and a source coupled with the data line, and the second transistor having a second threshold voltage different from the first threshold voltage. |
| 申请公布号 |
US2015138904(A1) |
申请公布日期 |
2015.05.21 |
| 申请号 |
US201514601652 |
申请日期 |
2015.01.21 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG Chou-Ying;HUANG Yi-Cheng;LIU Shang-Hsuan |
| 分类号 |
G11C7/12;G11C7/06 |
主分类号 |
G11C7/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory circuit comprising:
a memory cell; a data line configured to be coupled with the memory cell; a node; a precharge circuit configured to charge the node toward a predetermined voltage level; a first transistor of a first type having a drain coupled with the node and a source coupled with the data line, the first transistor having a first threshold voltage; and a second transistor of the first type having a drain coupled with the node and a source coupled with the data line, the second transistor having a second threshold voltage different from the first threshold voltage. |
| 地址 |
Hsinchu TW |
