SEMICONDUCTOR LAYER SEQUENCE AND METHOD FOR PRODUCING THE SAME

摘要

In at least one embodiment, the semiconductor layer sequence (10) has an n-conducting n side (11), a p-conducting p side (13) and an active zone (2) lying in between. The active zone (2) has at least one radiation-active layer (21) with a first material composition for generating a first radiation (L1). The at least one radiation-active layer (21) is oriented perpendicularly to a direction of growth (z) of the semiconductor layer sequence. Furthermore, the active zone (2) has a multiplicity of radiation-active tubes (22) with a second material composition or a different crystal structure for generating a second radiation (L2), wherein the second material composition is different from the first material composition. The radiation-active tubes (22) are oriented parallel to the direction of growth (z).