NITNIDE BASED FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME

摘要

A manufacturing method of a nitride-based field device of the present invention comprises: a step of forming a nitride-based laminate which forms a nitride-based field device on a sapphire substrate; a step of attaching a first heat conduction substrate on the opposite side of an area in which the sapphire substrate of the nitride-based laminate is located; a step of removing the sapphire substrate; a step of forming an additional laminate on the nitride-based laminate area in which the sapphire substrate is removed; and a step of attaching a second heat conduction substrate on an exposing area of the additional laminate. According to the present invention, leakage current can be effectively prevented with low priced manufacturing costs.